PART |
Description |
Maker |
2SK435 2SK435E |
Silicon N Channel MOS FET Silicon N-Channel Junction FET TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92
|
Hitachi Semiconductor
|
3SK309 |
Silicon N Channel MOS FET GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
2SJ540 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
2SJ555 |
0.036 ohm, POWER, FET Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
2SK3782 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N沟道硅片结型场效应晶体管的阻抗流脑转 N-channel Silicon J-FET
|
NEC, Corp. NEC[NEC]
|
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
2SK2121 |
Silicon N-Channel MOS FET(N沟道MOSFET) Silicon N-Channel MOS FET(N娌??MOSFET)
|
Hitachi,Ltd.
|
MTM86627 |
Silicon P-channel MOS FET (FET)
|
Panasonic
|